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- دیتاشیت STB45N65M5
STB45N65M5 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | STB45N65M5 |
|---|---|
| حجم فایل | 66.746 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 20 |
دانلود دیتاشیت STB45N65M5 |
دانلود دیتاشیت |
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سایر مستندات
STB,F,P45N65M5 20 pages
STB45N65M5 2 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB45N65M5
- Power Dissipation (Pd): 210W
- Total Gate Charge (Qg@Vgs): 91nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 3375pF@100V
- Continuous Drain Current (Id): 35A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 78mΩ@19.5A,10V
- Package: D2PAK
- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3375pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB45N
- detail: N-Channel 650V 35A (Tc) 210W (Tc) Surface Mount D2PAK